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ZXMP7A17K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
V (BR)DSS
-70
V
I D = -250 A, V GS =0V
voltage
Zero gate voltage drain
I DSS
-1
A
V DS = -70V, V GS =0V
current
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
-1.0
V
I D = -250 A, V DS =V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.16
0.25
V GS = -10V, I D = -2.1A
V GS = -4.5V, I D = -1.7A
Forward transconductance (*)(?) g fs
4.4
S
V DS = -15V, I D = -2.1A
Dynamic (?)
Input capacitance
C iss
635
pF
Output capacitance
Reverse transfer capacitance
C oss
C rss
52
42.5
pF
pF
V DS = -40V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
t d(on)
2.5
ns
Rise time
Turn-off delay time
Fall time
Total gate charge
t r
t d(off)
t f
Q g
3.4
27.9
8
9.6
ns
ns
ns
nC
V DD = -35V, I D = -1A
R G ? 6.0 , V GS = -10V
V DS = -35V, V GS = -5V
I D = -2.1A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
18
1.77
3.66
nC
nC
nC
V DS = -35V, V GS = -10V
I D = -2.1A
Source-drain diode
Diode forward voltage (*)
V SD
-0.85
-0.95
V
T j =25°C, I S = -2.0A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
29.8
38.5
ns
nC
T j =25°C, I S = -2.1A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - August 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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